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PHOTOMULTIPLIER TUBES
R7518 R7518P (For Photon Counting)
High Sensitivity with Low Noise Photocathode
FEATURES
GSpectral Response .................................. 185 nm to 730 nm GHigh Cathode Sensitivity Luminous ......................................................... 130 A/lm Radiant at 410 nm ............................................. 85 mA/W GHigh Anode Sensitivity (at 1000 V) Luminous ......................................................... 1560 A/lm Radiant at 410 nm ..................................... 10.2 x 105 A/W GLow Dark Current ....................................................... 0.2 nA GLow Dark Counts (R7518P) ......................................... 10 s-1
APPLICATIONS
GChemiluminescence Detection GBioluminescence Detection GFluorescence Spectrometer GSO2 Monitor (UV Fluorescence)
SPECIFICATIONS
GENERAL
Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Secondary Emitting Surface Structure Dynode Number of Stages Anode to Last Dynode Direct Interelectrode Anode to All Other Electrode Capacitances Base Weight Operating Ambient Temperature Storage Temperature SuitabIe Socket SuitabIe Socket Assembly Description/Value 185 to 730 410 Low noise bialkali 8 x 24 UV glass Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 45 -30 to +50 -30 to +50 E678-11A (Sold Separately) E717-63 (Sold Separately) Unit nm nm -- mm -- -- -- -- pF pF -- g C C -- --
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R7518, R7518P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA
CHARACTERISTlCS (at 25 C)
R7518 for General Purpose R7518P for Photon Counting Unit Typ. Max. Min. Min. Typ. Max. -- % Quantum Efficiency at 300 nm (Peak) -- -- 29 29 -- A/lm -- 120 Luminous B 120 130 130 -- Cathode Sensitivity -- mA/W -- Radiant at 410 nm (Peak) -- 85 -- 85 -- A/lm-b Blue Sensitivity Index (CS 5-58) -- -- 10 -- 10 -- Luminous C A/lm 1200 1200 1560 -- 1560 Anode Sensitivity -- A/W Radiant at 400 nm -- -- 10.2 x 105 -- 10.2 x 105 -- 1.2 x 107 1.2 x 107 -- -- -- -- Gain D 2.0 Anode Dark Current E (After 30 min Storage in darkness) 0.2 0.2 nA -- 0.5 -- -- Anode Dark Counts E -- 10 s-1 -- 50 -- -- ENI (Equivalent Noise Input) F W 2.7 x 10-17 2.7 x 10-17 -- -- -- -- 2.2 2.2 Anode Pulse Rise Time G ns -- -- -- -- Time Response D Electron Transit Time 22 22 ns -- -- -- -- Transit Time Spread (TTS) H 1.2 1.2 ns -- -- -- -- 0.1 0.1 % -- -- -- J Light Hysteresis Anode Current Stability -- Voltage Hysteresis 1.0 1.0 % -- -- -- Parameter
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 150 V between the cathode and all other electrodes connected together as anode. C: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. D: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. E: Measured at the voltage producing the gain of 1 x 106. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. (W) S where q = Electronic charge. (1.60 x 10-19 coulomb) ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. (usually 1 hertz) S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response ENI = G:The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. 2q.ldb.G. f K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. 100 (%)
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
(1)Current Hysteresis The tube is operated at 750 V with an anode current of 1 A for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 A for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio
Electrodes Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
SuppIy Voltage : 1000 V, K: Cathode, Dy: Dynode, P: Anode
Figure 1: Typical Spectral Response
1000
TPMSB0177EA
Figure 2: Typical Gain and Anode Dark Current
10-5
TPMSB0011EA
108
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY 100
10-6
107
ANODE DARK CURRENT (A)
10-7
G AI N
106
10 QUANTUM EFFICIENCY 1
10-8
105
10-10
DA RK
CU RR EN T
10-9
104
103
0.1 10-11
AN O DE
102
0.01 100
200
300
400
500
600
700
800
10-12 300
400
500
600
800
1000
101 1500
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 3: Typical Time Response
100 80 60 40
TRAN SIT T IME
TPMSB0004EB
Figure 4: Typical ENI vs. Wavelength
10-13
TPMSB0178EA
EQUIVALENT NOISE INPUT (W)
10-14
20
10-15
TIME (ns)
10 8 6 4
RISE TIME
10-16
10-17 100
200
300
400
500
600
700
800
2
WAVELENGTH (nm)
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
Figure 5: Typical Single Photon Pulse Height Distribution for R7518P
1.0
TPMSB0179EB
Figure 6: Typical Temperature Characteristics of Dark Count for R7518P
104
TPMSB0015EB
FULL SCALE 104 (PHOTON+DARK) FULL SCALE 103 (DARK)
COUNT PER CHANNEL
0.8
LOWER LEVEL DISCRI.
DARK COUNT (s-1)
WAVELENGTH OF INCIDENT LIGHT: 450 (nm) : 722 (V) SUPPLY VOLTAGE : 67 (ch) LOWER LEVEL DISCRI. PHOTON + DARK COUNT : 6021 (s-1) : 10 (s-1) DARK COUNT AMBIENT TEMPERATURE : 25 (C)
103
0.6
102
0.4 PHOTON+DARK 0.2
101
100
DARK 0 200 400 600 800 1000
10-1 -20
0
+20
+40
+50
CHANNEL NUMBER (CH)
TEMPERATURE (C)
GAIN
PHOTOMULTIPLIER TUBES R7518, R7518P (For Photon Counting)
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
28.5 1.5 8 MIN. 49 38 PHOTOCATHODE DY5 24 MIN. DY4 4 80 MAX. 94 MAX. DY3 3 DY2 2 1 11 K 29 DY6 6 DY7 33 5 18 32.2 0.5 11 PIN BASE JEDEC No. B11-88
TPMSA0001EB TACCA0064EA
Figure 8: Socket E678-11A (Sold Separately)
5
7
8 DY8 9 DY9 10 P 3.5 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) -HV AWG22 (VIOLET)
TACCA0002EH
49.0 2.5
DY1
DIRECTION OF LIGHT
Bottom View (Basing Diagram)
Figure 9: D Type Socket Assembly E717-63 (Sold Separately)
5 33.0 0.3 3.5 PMT P R10 DY9 38.0 0.3 49.0 0.3 29.0 0.3 4 DY8 DY7 DY6 DY5 30.0 +0 -1 0.7 31.0 0.5 HOUSING (INSULATOR) DY4 DY3 DY2 9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 DY1 K 1 R1 11 R1 to R10 : 330 k C1 to C3 : 10 nF C1 C2 C3 SOCKET PIN No. 10
450 10
POTTING COMPOUND
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1060E02
4
APR. 2005. IP

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